DocumentCode :
1874718
Title :
Parallel Simulation Of GaAs MESFET Semiconductor Devices With Adaptive Meshing On A Transputer Network
Author :
Tsang-Ping, C.S. ; Barry, D.M. ; Snowden, C.M.
Author_Institution :
Department of Electronic and Electrical Engineering The University of Leeds, United Kingdom
fYear :
1994
fDate :
26-28 Jan 1994
Firstpage :
190
Lastpage :
195
Keywords :
Computational modeling; Concurrent computing; Current density; Distributed computing; Finite difference methods; Gallium arsenide; MESFETs; Parallel processing; Semiconductor devices; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Parallel and Distributed Processing, 1994. Proceedings. Second Euromicro Workshop on
Print_ISBN :
0-8186-5370-1
Type :
conf
DOI :
10.1109/EMPDP.1994.592489
Filename :
592489
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1874718
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