Title :
Emission statistics for Si and HfC/Si emitter arrays after gas exposure
Author :
Nicolaescu, D. ; Nagao, M. ; Sato, T. ; Filip, V. ; Kanemaru, S. ; Itoh, J.
Author_Institution :
Nanoelectronics Res. Inst., Agency of Ind. Sci. & Technol., Ibaraki, Japan
Abstract :
Test arrays of gated Si emitters with Ntips=100 tips have been fabricated. A HfC coating layer was deposited on the tips, showing effectiveness in lowering the operational voltage and improving the uniformity of the array emission. The Si and Si/HfC emitter arrays were measured in high vacuum conditions and after being subject to Ar and O2 residual gases with partial pressures in the range 10-4 to 10-6 Pa, the evolution in time of the emission properties being recorded. The influence of residual gases on the field emission (FE) properties has been comparatively characterized through model parameter extraction.
Keywords :
coatings; elemental semiconductors; field emission; field emitter arrays; hafnium compounds; silicon; FE; Si-HfC; array emission uniformity; coating layer; emission property time evolution; emission statistics; emitter arrays; field emission; gas exposure; gated emitter test array fabrication; high vacuum condition; model parameter extraction; operational voltage; partial pressure; residual gases; Argon; Coatings; Gases; Hybrid fiber coaxial cables; Iron; Parameter extraction; Statistics; Testing; Time measurement; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354939
