Full area simulation of multicrystalline silicon solar cells with high spatial resolution

Author

Stoicescu, L. ; Gedeon, P. ; Glaser, G.C.

Author_Institution

Inst. fur Phys. Elektron., Univ. Stuttgart, Stuttgart, Germany

fYear

2011

fDate

19-24 June 2011

Abstract

The simulation calculates the effects of lateral inhomogeneity on the full area of industrial solar cells with a resolution of up to 100 μm in less than 30 minutes on a desktop PC. A model interpreting each pixel of the spatially resolved input data as an elementary cell consists of more than 10⁶ nodes. Our method reduces this complexity to 6 × 10⁴ nodes by decomposing the data into small quadratic blocks of variable size depending on local homogeneity. The effects of the emitter sheet resistance and front side grid metallization on the distribution of the local diode voltage V(r) under open circuit conditions are demonstrated.

Keywords

metallisation; silicon; solar cells; Si; desktop PC; elementary cell; emitter sheet resistance effects; front side grid metallization; full area simulation; high spatial resolution; industrial solar cells; lateral inhomogeneity effects; local diode voltage distribution; multicrystalline silicon solar cells; open circuit conditions; quadratic blocks; Image edge detection; Integrated circuit modeling; Metallization; Nonhomogeneous media; Photovoltaic cells; Resistors; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186701

Filename

6186701