DocumentCode :
1874870
Title :
Isotropic 3D silicon hall sensor
Author :
Sander, Christian ; Leube, Carsten ; Aftab, Taimur ; Ruther, Patrick ; Paul, Oliver
Author_Institution :
Dept. of Microsyst. Eng. (IMTEK), Univ. of Freiburg, Freiburg, Germany
fYear :
2015
fDate :
18-22 Jan. 2015
Firstpage :
893
Lastpage :
896
Abstract :
This paper reports the first three-dimensional (3D) Hall sensor with isotropic sensitivity for the three spatial components of the magnetic field. The silicon device has the shape of a hexagonal prism with symmetric sets of three contacts on its top and bottom surfaces. Sending currents obliquely across the device allows one to operate it as three mutually crossing, identical, and effectively orthogonal Hall sensors. The sensitivity vectors of these Hall sensors are easily converted into sensitivities in the Cartesian coordinate system xyz. We demonstrate a design achieving sensitivities of Sx = 33.0 mV/VT, Sy = 33.9 mV/VT and Sz = 33.3 mV/VT.
Keywords :
Hall effect transducers; elemental semiconductors; sensors; silicon; Cartesian coordinate system; Si; bottom surfaces; hexagonal prism; isotropic 3D silicon Hall sensor; isotropic sensitivity; magnetic field; orthogonal Hall sensors; sensitivity vectors; spatial components; symmetric sets; three-dimensional Hall sensor; top surfaces; Actuators; Magnetic field measurement; Magnetic fields; Sensitivity; Silicon; Three-dimensional displays; Vectors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
Type :
conf
DOI :
10.1109/MEMSYS.2015.7051103
Filename :
7051103
Link To Document :
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