• DocumentCode
    1875108
  • Title

    Preparation of aligned Cu2S nanowire arrays and their field emission properties

  • Author

    Wu, Q.B. ; Ren, S. ; Deng, S.Z. ; Chen, Jun ; Xu, N.S.

  • Author_Institution
    State Key Laboratory of Optoelectronic Mater. & Technol., Sun Yat-sen (Zhongshan) Univ., Guangzhou, China
  • fYear
    2004
  • fDate
    11-16 July 2004
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    Large-area and well-aligned Cu2S nanowire arrays were fabricated by gas-solid reaction. X-ray diffraction and scanning-electron microscopy (SEM) were employed to characterize the nanowire arrays. The Cu2S nanowire arrays grown on copper film were 50-200 nm in diameter and several micrometers long. Also, the field emission characteristics of the nanowires were studied in this work.
  • Keywords
    X-ray diffraction; copper compounds; field emission; field emitter arrays; nanowires; scanning electron microscopy; Cu2S; SEM; X-ray diffraction; aligned nanowire array preparation; field emission properties; gas-solid reaction; large-area nanowire arrays; scanning-electron microscopy; Copper; Educational technology; Electron emission; Flat panel displays; Laboratories; Magnetic field measurement; Scanning electron microscopy; Semiconductor films; Sun; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
  • Print_ISBN
    0-7803-8397-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2004.1354951
  • Filename
    1354951
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875108