DocumentCode :
1875108
Title :
Preparation of aligned Cu2S nanowire arrays and their field emission properties
Author :
Wu, Q.B. ; Ren, S. ; Deng, S.Z. ; Chen, Jun ; Xu, N.S.
Author_Institution :
State Key Laboratory of Optoelectronic Mater. & Technol., Sun Yat-sen (Zhongshan) Univ., Guangzhou, China
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
164
Lastpage :
165
Abstract :
Large-area and well-aligned Cu2S nanowire arrays were fabricated by gas-solid reaction. X-ray diffraction and scanning-electron microscopy (SEM) were employed to characterize the nanowire arrays. The Cu2S nanowire arrays grown on copper film were 50-200 nm in diameter and several micrometers long. Also, the field emission characteristics of the nanowires were studied in this work.
Keywords :
X-ray diffraction; copper compounds; field emission; field emitter arrays; nanowires; scanning electron microscopy; Cu2S; SEM; X-ray diffraction; aligned nanowire array preparation; field emission properties; gas-solid reaction; large-area nanowire arrays; scanning-electron microscopy; Copper; Educational technology; Electron emission; Flat panel displays; Laboratories; Magnetic field measurement; Scanning electron microscopy; Semiconductor films; Sun; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354951
Filename :
1354951
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1875108
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