Title :
Bimorph pMUT with dual electrodes
Author :
Akhbari, Sina ; Sammoura, Firas ; Yang, Chen ; Mahmoud, Maitha ; Aqab, Nawal ; Liwei Lin
Author_Institution :
Dept. of Mech. Eng., Univ. of California at Berkeley, Berkeley, CA, USA
Abstract :
The concept of “bimorph” piezoelectric micromachined ultrasonic transducers (pMUTs) has been demonstrated by utilizing a two active AlN layers structure constructed in a CMOS-compatible process. The prototype device has two 0.95μm-thick AlN layers sandwiched by three 0.15μm-thick Mo electrodes. In a prototype, both an inner circular and an outer annular electrode are designed on a 230 μm in radius, circular-shape diaphragm. When actuated with the inner electrode of 160μm in radius, the pMUT has a resonant frequency of 198.8 kHz and central displacement of 407.4 nm/V. Under the differential drive scheme using the dual-electrodes for large acoustic outputs at a low frequency, the measured central displacement is 13.0 nm/V, which is about 400% higher than that of a unimorph AlN-pMUT under similar actuation conditions. As such, the dual-electrode bimorph pMUT presents the improved operation as compared with the state-of-the-art flat pMUT design to achieve enhanced acoustic outputs.
Keywords :
aluminium compounds; electrodes; micromachining; molybdenum; piezoelectric transducers; ultrasonic transducers; AlN; CMOS-compatible process; Mo; bimorph piezoelectric micromachined ultrasonic transducers; dual electrodes; frequency 198.8 kHz; inner circular electrode; outer annular electrode; size 0.15 mum; size 160 mum; size 230 mum; Acoustics; Displacement measurement; Electrodes; Frequency measurement; III-V semiconductor materials; Resonant frequency; Ultrasonic transducers;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
DOI :
10.1109/MEMSYS.2015.7051112