Title :
Design and performance of a prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector at 1310 nm and 1550 nm wavelengths
Author :
Intermite, G. ; Warburton, R.E. ; Myronov, M. ; Allred, P. ; Leadley, D.R. ; Gallacher, Kevin ; Paul, Douglas J. ; Pilgrim, N.J. ; Lever, L.J.M. ; Ikonic, Zoran ; Kelsall, R.W. ; Buller, Gerald S.
Author_Institution :
Sch. of Eng. & Phys. Sci., Heriot-Watt Univ., Edinburgh, UK
Abstract :
Ge-on-Si single-photon detectors are fabricated and characterized at 1310 and 1550 nm. 4 % single-photon detection efficiency is observed at 1310 nm demonstrating the lowest reported noise equivalent power for Ge-on-Si single-photon detectors (1×10-14 WHz-1/2).
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; optical design techniques; optical fabrication; photodetectors; prototypes; selenium; semiconductor device noise; Ge-Si; noise equivalent power; prototype mesa-geometry Ge-on-Si single-photon avalanche diode detector; single-photon detection efficiency; wavelength 1310 nm to 1550 nm; Absorption; Detectors; Indium gallium arsenide; Indium phosphide; Photonics; Silicon; Temperature measurement;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644406
