DocumentCode :
1875253
Title :
Franz-Keldysh and avalanche effects in a germanium waveguide photodiode
Author :
Takeda, Kenji ; Hiraki, Tatsurou ; Tsuchizawa, Tai ; Nishi, Hidetaka ; Rai Kou ; Fukuda, Hiroshi ; Ishikawa, Yozo ; Wada, Kazuyoshi ; Yamada, Koji
Author_Institution :
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
fYear :
2013
fDate :
28-30 Aug. 2013
Firstpage :
138
Lastpage :
139
Abstract :
At a high-voltage reverse bias, a germanium photodiode with a silicon waveguide exhibits responsivity of over 1 A/W in the entire C- and L-bands due to the Franz-Keldysh effect and avalanche multiplication.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; optical waveguides; photodetectors; silicon; C-band; Franz-Keldysh effects; Ge-Si; L-band; avalanche effects; avalanche multiplication; germanium waveguide photodiode; high-voltage reverse bias; silicon waveguide; Absorption; Dark current; Germanium; L-band; Optical waveguides; Photodiodes; Silicon; Franz-Keldysh effect; Germanium photodiode; Si photonics; avalanche effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
ISSN :
1949-2081
Print_ISBN :
978-1-4673-5803-3
Type :
conf
DOI :
10.1109/Group4.2013.6644409
Filename :
6644409
Link To Document :
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