• DocumentCode
    1875342
  • Title

    Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength

  • Author

    Velha, P. ; Dumas, Derek C. ; Gallacher, Kevin ; Millar, Ross ; Myronov, M. ; Leadley, D.R. ; Paul, Douglas J.

  • Author_Institution
    Sch. of Eng., Univ. of Glasgow, Glasgow, UK
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    142
  • Lastpage
    143
  • Abstract
    The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to ~2.5 μm.
  • Keywords
    elemental semiconductors; etching; germanium; nanostructured materials; photoluminescence; silicon compounds; thin films; Ge-Si3N4; Si; etching; photoluminescence emission; process-induced tensile strained germanium nanostructures; silicon nitride thin film; size 100 nm; Laser excitation; Optical device fabrication; Photonic band gap; Pump lasers; Silicon; Tensile strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644411
  • Filename
    6644411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875342