• DocumentCode
    1875379
  • Title

    Theoretical analysis of bulk Ge-on-Si laser performance

  • Author

    Yan Cai ; Zhaohong Han ; Wei Yu ; Camacho-Aguilera, Rodolfo ; Kimerling, Lionel C. ; Michel, J.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    144
  • Lastpage
    145
  • Abstract
    A modified gain modeling shows Ge has a wide gain bandwidth from 1550 nm to 1770 nm. Optimized laser structure predicts that Ge laser can achieve a lasing threshold of 2.2 kA/cm2.
  • Keywords
    elemental semiconductors; germanium; laser beams; laser theory; semiconductor lasers; silicon; Ge-Si; bulk Ge-on-Si laser performance; gain bandwidth; gain modeling; lasing threshold; optimized laser structure; wavelength 1550 nm to 1770 nm; Absorption; Free electron lasers; Laser modes; Laser theory; Pump lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644412
  • Filename
    6644412
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875379