DocumentCode
1875423
Title
A wavelength selectable hybrid III–V/Si laser fabricated by wafer bonding
Author
Le Liepvre, A. ; Jany, C. ; Accard, A. ; Lamponi, Marco ; Make, Dalila ; Lelarge, F. ; Fedeli, J.-M. ; Messaoudene, S. ; Bordel, D. ; Duan, Guang-Hua
Author_Institution
III-V Lab., Alcatel-Lucent Bell Labs. France´, Palaiseau, France
fYear
2013
fDate
28-30 Aug. 2013
Firstpage
150
Lastpage
151
Abstract
This paper reports on a hybrid III-V on silicon arrayed waveguide grating laser, operating on 5 wavelength channels spaced by 392 GHz, with a threshold current around 40mA and a maximum output power around 3 dBm.
Keywords
III-V semiconductors; arrayed waveguide gratings; elemental semiconductors; integrated optics; integrated optoelectronics; optical fabrication; semiconductor lasers; silicon; wafer bonding; Si; arrayed waveguide grating laser; bandwidth 392 GHz; output power; threshold current; wafer bonding; wavelength selectable hybrid III-V-Si laser; Arrayed waveguide gratings; Fiber lasers; Laser modes; Optical fibers; Silicon; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location
Seoul
ISSN
1949-2081
Print_ISBN
978-1-4673-5803-3
Type
conf
DOI
10.1109/Group4.2013.6644415
Filename
6644415
Link To Document