Title :
Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3
Author :
Franco, Jacopo ; Alian, A. ; Kaczer, Ben ; Lin, Dongyang ; Ivanov, T. ; Pourghaderi, Ali ; Martens, K. ; Mols, Y. ; Zhou, Dizhi ; Waldron, Niamh ; Sioncke, S. ; Kauerauf, T. ; Collaert, Nadine ; Thean, A. ; Heyns, Marc ; Groeseneken, Guido
Author_Institution :
Imec, Leuven, Belgium
Abstract :
We present a comprehensive study of Positive Bias Temperature Instability (PBTI) in In0.53Ga0.47As devices with Al2O3 gate oxide, and with varying thickness of the channel quantum well. We show significant instability of the device electrical parameters induced by electron trapping into a wide distribution of defects in the high-k layer, with energy levels just above the InGaAs conduction band. A significant PBTI dependence on the channel thickness is found and ascribed to quantization effects. We argue that, in order to be relevant for production, the superior transport properties of III-V channels will need to be demonstrated with more stable high-k gate stacks.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; electron traps; gallium arsenide; high-k dielectric thin films; indium compounds; integrated circuit reliability; quantum well devices; Al2O3; III-V channels; III-V devices; In0.53Ga0.47As; PBTI; channel quantum well; conduction band; defects; device electrical parameters; electron trapping; energy levels; high-k gate oxides; high-k layer; positive bias temperature instability; quantization effects; transport properties; Aluminum oxide; Indium gallium arsenide; Logic gates; MOS devices; Silicon; Stress; Voltage measurement; Bias Temperature Instability; III–V; InGaAs; Quantum Well; Reliability;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861098
