Title :
SiGe composition and thickness effects on NBTI in replacement metal gate / high-κ technologies
Author :
Srinivasan, P. ; Fronheiser, J. ; Akarvardar, K. ; Kerber, Andreas ; Edge, Lisa F. ; Southwick, Richard G. ; Cartier, E. ; Kothari, H.
Author_Institution :
GLOBALFOUNDRIES Inc., Albany, NY, USA
Abstract :
The dependence of NBTI on SiGe thickness and composition for epitaxially grown layers on (100) and (110) Si substrates is studied in detail. It is found that SiGe thickness has no significant impact on NBTI at lower Ge%. However, lower NBTI degradation was observed with increasing Ge%, even though the interface state densities (Nit) increase with respect to Si. This improved NBTI is due to band offset limited VT, indicating that the improvement is substrate related rather than interface related. The physical mechanism is then discussed in terms of Ge%-induced variation in the band alignment.
Keywords :
CMOS analogue integrated circuits; Ge-Si alloys; epitaxial growth; high-k dielectric thin films; interface states; negative bias temperature instability; NBTI degradation; SiGe; band alignment; epitaxially grown layers; germanium-induced variation; interface state density; physical mechanism; replacement metal gate-high-κ technology; silicon-germanium composition; siliocn substrates; thickness effect; Degradation; Interface states; Logic gates; Silicon; Silicon germanium; Stress; Substrates; NBTI; SiGe; band offsets; high-κ; replacement gate;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861099
