Title :
High efficiency wavelength conversion of 40 Gbps signals at 1550 nm in SOI nano-rib waveguides using p-i-n diodes
Author :
Gajda, Andrzej ; Da Ros, F. ; Vukovic, Dragana ; Zimmermann, L. ; Peucheret, Christophe ; Tillack, Bernd ; Peterman, K.
Author_Institution :
Inst. fur Hochfrequenz- und Halbleiter-Systemtechnologien, Tech. Univ. Berlin, Berlin, Germany
Abstract :
We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of -4.6 dB enables a conversion power penalty as low as 0.2 dB.
Keywords :
elemental semiconductors; integrated optics; integrated optoelectronics; nanophotonics; optical communication equipment; optical waveguides; optical wavelength conversion; p-i-n diodes; rib waveguides; silicon-on-insulator; FWM wavelength conversion; SOI nanorib waveguides; Si; bit rate 40 Gbit/s; conversion efficiency; conversion power penalty; high efficiency wavelength conversion; p-i-n diodes; reverse-biased p-i-n junction silicon waveguide; wavelength 1550 nm; Optical fiber amplifiers; Optical wavelength conversion; PIN photodiodes; Silicon; Waveguide junctions;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644420
