DocumentCode :
1875588
Title :
Ion-beam morphological conditioning of carbon field emission cathode surfaces
Author :
Hunt, Charles E. ; Chakhovskoi, Andrei G. ; Wang, Yu
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Davis, CA, USA
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
198
Lastpage :
199
Abstract :
Square-cm samples of bulk graphite, reticulated vitreous carbon, and paste graphite film have been evaluated for field-emission properties both before and after surface modification using a novel Ar-ion flood bombardment method. The Ar-ion treatment results in a change in surface morphology of the emission cathode which physically resembles results of emission treatments using lasers or other heat sources, as well as results obtained using current or voltage stress treatment methods. Emission properties become more uniform, exhibit less noise, and, in the best cases, match results seen from carbon nanotubes or ultra-nanocrystalline diamond cathodes. The results demonstrate a method for obtaining large total currents at optimal extraction voltages, from large-area, low-cost cathodes. This method is useful for applications, such as field-emission lamps and x-ray tubes, which do not require nanofabricated cathode structures.
Keywords :
cathodes; field emission; graphite; ion beam effects; surface morphology; vitreous state; Ar-ion flood bombardment method; C; bulk graphite; carbon field emission cathode surfaces; ion-beam morphological conditioning; optimal extraction voltages; paste graphite film; reticulated vitreous carbon; stress treatment methods; surface modification; surface morphology; Carbon dioxide; Cathodes; Floods; Laser noise; Laser theory; Laser transitions; Surface emitting lasers; Surface morphology; Surface treatment; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354970
Filename :
1354970
Link To Document :
بازگشت