Title :
A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs
Author :
Goel, Nishith ; Mukhopadhyay, Saibal ; Nanaware, N. ; De, Suvranu ; Pandey, Rajan K. ; Murali, Kota V. R. M. ; Mahapatra, Santanu
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
DC and AC NBTI in deep EOT scaled HKMG p-MOSFETs with different IL (scaled to sub 2Å) are measured by UF-MSM method with 10μs delay. A model with interface trap generation (ΔVIT-IL) at Si/IL interface, hole trapping (ΔVHT) in IL bulk and trap generation (ΔVIT-HK) linked to H passivated Oxygen vacancy (Ov-H) defects in IL/HK interfacial transition layer has been proposed. The existence of Ov defects and their energy levels are verified using DFT simulation. The model can successfully predict VT shift (ΔVT) during and after DC stress, dependence on pulse duty cycle (PDC) and frequency (f) for AC stress, and gate insulator process dependence with consistent set of parameters. Impact of EOT scaling on DC and AC NBTI is studied, and end-of-life degradation has been estimated.
Keywords :
MOSFET; density functional theory; elemental semiconductors; high-k dielectric thin films; hole traps; negative bias temperature instability; semiconductor device models; semiconductor device reliability; silicon; vacancies (crystal); AC stress; DC stress; DFT simulation; H passivated oxygen vacancy defects; IL bulk generation; IL-HK interfacial transition layer; Ov-H defects; PDC; Si; UF-MSM method; comprehensive DC-AC model; deep EOT scaled HKMG p-MOSFETs; end-of-life degradation; energy levels; gate insulator process dependence; hole trapping; interface trap generation; negative bias temperature instability; pulse duty cycle; time 10 mus; ultra-fast NBTI method; ultra-fast measure-stress-measure method; Charge carrier processes; Delays; Logic gates; Silicon; Stress; Stress measurement; DCIV measurement; DFT simulation; Flicker noise measurement; HKMG; NBTI; Oxygen vacancy; Reaction-Diffusion model; Ultrafast-MSM; hole trapping; interface trap generation;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861100
