DocumentCode
1875613
Title
Double-gated silicon field emission arrays: fabrication and characterization
Author
Chen, L.-Y. ; Akinwande, A.I.
Author_Institution
Microsystems Technol. Lab., MIT, MA, USA
fYear
2004
fDate
11-16 July 2004
Firstpage
200
Lastpage
201
Abstract
In this work, the gate field factor and focus field factor were examined in the double-gated field emission array (FEA) and were shown to have strong influence on the initial beam spread. The optical measurement verified that the device with the tip below the gate aperture provides a small beam spread.
Keywords
electron beam focusing; electron field emission; elemental semiconductors; silicon; FEA; Si; beam spread; double-gated silicon field emission arrays; focus field factor; gate field factor; Anodes; Apertures; Collimators; Electron emission; Fabrication; Field emitter arrays; Focusing; Optical arrays; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1354971
Filename
1354971
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