DocumentCode
187563
Title
Bias temperature instability variation on SiON/Poly, HK/MG and trigate architectures
Author
Prasad, C. ; Agostinelli, M. ; Hicks, J. ; Ramey, S. ; Auth, C. ; Mistry, Khyati ; Natarajan, Sriraam ; Packan, P. ; Post, I. ; Bodapati, S. ; Giles, Mike ; Gupta, Swastik ; Mudanai, S. ; Kuhn, Kelin
Author_Institution
Logic Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
fYear
2014
fDate
1-5 June 2014
Abstract
A summary of NBTI variation is reported on large data-sets across five generations of Intel technologies (90 nm to 22 nm) and a comparison of statistical frameworks is utilized to show the universality of variation metrics across generations. Large volumes of data and modeling are emphasized as critical to enable accurate simulations of NBTI in extreme tails.
Keywords
MOSFET; negative bias temperature instability; oxygen compounds; silicon compounds; statistical analysis; HK-MG architectures; Intel technologies; MOSFET; NBTI variation; SiON; bias temperature instability variation; large data-sets; statistical frameworks; trigate architectures; variation metrics; Data models; Degradation; MOSFET; Stress; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6861101
Filename
6861101
Link To Document