Title :
Correlation of BTI induced device parameter degradation and variation in scaled Metal Gate / High-k CMOS technologies
Author :
Kerber, Andreas ; Nigam, Tanya
Author_Institution :
Reliability Eng., GLOBALFOUNDRIES Inc., Malta, NY, USA
Abstract :
The correlation between time-zero device parameter and BTI induced parameter degradation is studied in detail. The device overdrive remains the dominant factor in the ΔIdsat for ultra-narrow logic gates while ΔVTlin shows a weak but measurable correlation to the time-zero value. The correlation has an impact on the σ-values of VTlin for stressed devices and should be considered for more accurate circuit aging simulations.
Keywords :
CMOS logic circuits; logic gates; BTI induced device parameter degradation correlation; circuit aging simulation; scaled metal gate-high-k CMOS technology; time-zero device parameter; ultranarrow logic gate; Correlation; Degradation; Integrated circuit modeling; Logic gates; Metals; Stress; Threshold voltage; BTI variability; CMOS; SRAM; high-k dielectrics; metal gate;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861102
