Title :
Fast characterization of PBTI and NBTI induced frequency shifts under a realistic recovery bias using a ring oscillator based circuit
Author :
Xiaofei Wang ; Seung-Hwan Song ; Paul, A. ; Kim, Chul Han
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Minnesota, Minneapolis, MN, USA
Abstract :
A ring oscillator based circuit for separately characterizing PBTI and NBTI induced frequency shifts is demonstrated in a high-k metal gate process. The proposed design, for the first time, supports AC stress with a realistic recovery condition. Other benefits over the previous works include sub-400 nanosecond measurement time, sub-picosecond resolution and a simple calibration procedure. Detailed stress and recovery measurements under different voltage and temperature test conditions are presented and analyzed.
Keywords :
calibration; negative bias temperature instability; oscillators; stress measurement; AC stress; NBTI; PBTI; calibration procedure; high-k metal gate process; induced frequency shift; realistic recovery bias; realistic recovery condition; recovery measurement; ring oscillator based circuit; stress measurement; subpicosecond resolution; temperature test condition; voltage test condition; Delays; Frequency measurement; MOS devices; Stress; Stress measurement; Temperature measurement; Aging; high-k metal gate; negative bias temperature instability (NBTI); positive bias temperature instability (PBTI);
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861104
