1.3 /spl mu/m InGaAs/GaPAsSb light emitting diode grown on GaAs

Author

Dowd, P. ; Braun, Wolfgang ; Ryu, C.M. ; Guo, C.-Z. ; Chen, Stanley L. ; Koelle, U. ; Johnson, S.R. ; Zhang, Yong-Heng ; Smith, Dante J.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

1999

fDate

28-28 May 1999

Firstpage

489

Lastpage

490

Abstract

Summary form only given. We demonstrate light emitting diodes operating at 1.3 /spl mu/m, based on a novel type-II InGaAs/GaPAsSb quantum well (QW) structure. Photoluminescence has also been achieved at wavelengths up to 1.5 /spl mu/m in samples with different compositions of the GaPAsSb layer. Theoretical modeling using a two-band envelope function approximation has shown that such long wavelength emission results from a spatially indirect transition in the type-II QWs in which the electron and hole wave functions have a strong spatial overlap.

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; light emitting diodes; photoluminescence; quantum well devices; semiconductor quantum wells; 1.3 micron; 1.5 micron; InGaAs-GaPAsSb; band edge diagram; electron wave functions; hole wave functions; island formation; light emitting diodes; long wavelength emission; photoluminescence; spatially indirect transition; strong spatial overlap; two-band envelope function approximation; type-II QW structure; Gallium arsenide; Indium gallium arsenide; Lattices; Light emitting diodes; Mirrors; Photonic band gap; Quantum dot lasers; Surface emitting lasers; Temperature dependence; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834489

Filename

834489