Title :
1.3 /spl mu/m InGaAs/GaPAsSb light emitting diode grown on GaAs
Author :
Dowd, P. ; Braun, Wolfgang ; Ryu, C.M. ; Guo, C.-Z. ; Chen, Stanley L. ; Koelle, U. ; Johnson, S.R. ; Zhang, Yong-Heng ; Smith, Dante J.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Summary form only given. We demonstrate light emitting diodes operating at 1.3 /spl mu/m, based on a novel type-II InGaAs/GaPAsSb quantum well (QW) structure. Photoluminescence has also been achieved at wavelengths up to 1.5 /spl mu/m in samples with different compositions of the GaPAsSb layer. Theoretical modeling using a two-band envelope function approximation has shown that such long wavelength emission results from a spatially indirect transition in the type-II QWs in which the electron and hole wave functions have a strong spatial overlap.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; light emitting diodes; photoluminescence; quantum well devices; semiconductor quantum wells; 1.3 micron; 1.5 micron; InGaAs-GaPAsSb; band edge diagram; electron wave functions; hole wave functions; island formation; light emitting diodes; long wavelength emission; photoluminescence; spatially indirect transition; strong spatial overlap; two-band envelope function approximation; type-II QW structure; Gallium arsenide; Indium gallium arsenide; Lattices; Light emitting diodes; Mirrors; Photonic band gap; Quantum dot lasers; Surface emitting lasers; Temperature dependence; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834489
