DocumentCode
187573
Title
Fast aging degradation rate prediction during production test
Author
Xiaoxiao Wang ; Winemberg, LeRoy ; Haggag, A. ; Chayachinda, Joe ; Saluja, Amandeep ; Tehranipoor, Mohammad
Author_Institution
Automotive & Ind. Solutions Group, Freescale Semicond., Inc., Austin, TX, USA
fYear
2014
fDate
1-5 June 2014
Abstract
A flow to predict a wafer/die´s speed degradation rate without burn-in using ATE tests is presented in this paper. The proposed flow is digital with less than 1μs measurement time per die, allowing it be applied to high volume production test. The accuracy of the proposed flow has been verified by silicon data collected from 5 Freescale® wafers from different production lots. With the proposed flow, the volume of devices requiring burn-in is reduced.
Keywords
ageing; automatic test equipment; automatic testing; integrated circuit reliability; integrated circuit testing; ATE test; die speed degradation rate; fast aging degradation rate prediction; high volume production test; wafer degradation rate; Aging; Clocks; Degradation; Delays; Semiconductor device measurement; Stress; System-on-chip; Aging Test; NBTI; on-chip sensor; style; styling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6861107
Filename
6861107
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