High speed and highly efficient Si optical modulator with MOS junction for 1.55 µm and 1.3 µm wavelengths

Author

Fujikata, J. ; Takahashi, Satoshi ; Takahashi, Masaharu ; Horikawa, Tsuyoshi

Author_Institution

Inst. for Photonics-Electron. Convergence Syst. Technol. (PECST), Japan

fYear

2013

fDate

28-30 Aug. 2013

Firstpage

65

Lastpage

66

Abstract

We developed a high speed and high efficiency Si optical modulator (Si-MOD) with a metal-oxide-semiconductor (MOS) junction by applying the low optical loss and low resistivity of the poly-Si gate. We designed the optimum Si-MOD structure and demonstrated a very high modulation efficiency of 0.28-0.30 Vcm, which is one of the most efficient in Si-MODs with MOS junctions. We also demonstrated a high speed of 15-25 Gbps for the Si-MOD for both the 1.55 μm and 1.3 μm wavelengths.

Keywords

MIS structures; elemental semiconductors; integrated optics; integrated optoelectronics; optical design techniques; optical losses; optical modulation; silicon; MOS junction; Si-MOD; bit rate 15 Gbit/s to 25 Gbit/s; metal-oxide-semiconductor junction; modulation efficiency; optical loss; optical modulator; poly-Si gate; resistivity; wavelength 1.3 mum; wavelength 1.55 mum; High-speed optical techniques; Junctions; Logic gates; Optical losses; Propagation losses; Silicon; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2013 IEEE 10th International Conference on

Conference_Location

Seoul

ISSN

1949-2081

Print_ISBN

978-1-4673-5803-3

Type

conf

DOI

10.1109/Group4.2013.6644428

Filename

6644428