Title :
Selective growth of carbon nanotubes on silicon protrusions
Author :
Sato, Hideki ; Hata, Koichi ; Miyake, Hideto ; Hiramatsu, Kazumasa ; Saito, Yahachi
Author_Institution :
Dept. of Electr. & Electron. Eng., Mie Univ., Tsu, Japan
Abstract :
A novel and simple process for fabrication of a carbon nanotube field emitter array is reported. Chemical vapor deposition (plasma enhanced CVD and thermal CVD) and lift-off process were used for selective growth of CNTs on the vertexes of the protrusions. The field emission measurements of the CNTs arrays were performed by taking current-voltage curves in an ultrahigh vacuum condition. It was found that the CNTs array grown by the TCVD with the Ti buffer layer gave the best FE characteristics.
Keywords :
carbon nanotubes; field emitter arrays; plasma CVD; C; carbon nanotube field emitter array; carbon nanotubes selective growth; chemical vapor deposition; current-voltage curves; field emission measurements; lift-off process; plasma enhanced CVD; silicon protrusions; thermal CVD; ultrahigh vacuum condition; Buffer layers; Carbon nanotubes; Chemical vapor deposition; Current measurement; Fabrication; Field emitter arrays; Performance evaluation; Plasma chemistry; Plasma measurements; Silicon;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354977
