DocumentCode
1875799
Title
Tapered Phononic Crystal sawresonator in GaN
Author
Siping Wang ; Popa, Laura C. ; Weinstein, Dana
fYear
2015
fDate
18-22 Jan. 2015
Firstpage
1028
Lastpage
1031
Abstract
This paper presents a new Phononic Crystal (PnC) resonator design in which a tapered PnC is used to confine a 970 MHz SAW resonance in a GaN-on-Si platform. Like other SAW resonator designs, the proposed resonator eliminates the release step common to most MEMS devices, leading to higher yield and simpler design and packaging. However, the use of a tapered PnC reflector in this work (Fig. 1) reduces the footprint of SAW resonators by > 100× relative to conventional metal grating reflectors while maintaining high Q. A 3.5× improvement in Q is experimentally demonstrated relative to resonators with uniform PnC reflectors of comparable dimensions. These devices can be integrated seamlessly with GaN MMIC technology.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; microcavities; micromechanical resonators; phononic crystals; silicon; surface acoustic wave resonators; wide band gap semiconductors; GaN-Si; MEMS devices; MMIC technology; SAW resonance; frequency 970 MHz; metal grating reflectors; tapered PnC reflector; tapered phononic crystal SAW resonator; Gallium nitride; Gratings; Metals; Silicon; Substrates; Surface acoustic waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location
Estoril
Type
conf
DOI
10.1109/MEMSYS.2015.7051137
Filename
7051137
Link To Document