• DocumentCode
    1875799
  • Title

    Tapered Phononic Crystal sawresonator in GaN

  • Author

    Siping Wang ; Popa, Laura C. ; Weinstein, Dana

  • fYear
    2015
  • fDate
    18-22 Jan. 2015
  • Firstpage
    1028
  • Lastpage
    1031
  • Abstract
    This paper presents a new Phononic Crystal (PnC) resonator design in which a tapered PnC is used to confine a 970 MHz SAW resonance in a GaN-on-Si platform. Like other SAW resonator designs, the proposed resonator eliminates the release step common to most MEMS devices, leading to higher yield and simpler design and packaging. However, the use of a tapered PnC reflector in this work (Fig. 1) reduces the footprint of SAW resonators by > 100× relative to conventional metal grating reflectors while maintaining high Q. A 3.5× improvement in Q is experimentally demonstrated relative to resonators with uniform PnC reflectors of comparable dimensions. These devices can be integrated seamlessly with GaN MMIC technology.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium compounds; microcavities; micromechanical resonators; phononic crystals; silicon; surface acoustic wave resonators; wide band gap semiconductors; GaN-Si; MEMS devices; MMIC technology; SAW resonance; frequency 970 MHz; metal grating reflectors; tapered PnC reflector; tapered phononic crystal SAW resonator; Gallium nitride; Gratings; Metals; Silicon; Substrates; Surface acoustic waves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
  • Conference_Location
    Estoril
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2015.7051137
  • Filename
    7051137