Enhancement of Vth drift for repetitive gate stress pulses due to charge feedback effect in GaN MIS-HEMTs

Author

Lagger, P. ; Ostermaier, C. ; Pogany, Dionyz

Author_Institution

Infineon Technol. Austria AG, Villach, Austria

fYear

2014

fDate

1-5 June 2014

Abstract

An unexpected enhancement of V_th drift (ΔV_th) in GaN MIS-HEMTs induced by repetitive forward gate bias stress pulses in contrast to single pulses is found. Further, it is revealed that the slope of ΔV_th recovery curves decreases for increasing intermediate-recovery time t_i, i.e. the recovery time in between individual stress pulses. The observed behavior is explained by the interaction of the 2DEG channel with the dielectric/III-N interface via the III-N barrier during (repetitive) stress, for which a charge feedback mechanism plays a crucial role.

Keywords

III-V semiconductors; MISFET; dielectric materials; gallium compounds; high electron mobility transistors; two-dimensional electron gas; wide band gap semiconductors; 2DEG channel; GaN; III-N barrier; charge feedback effect; dielectric interface; drift enhancement; intermediate-recovery time; recovery curves; repetitive forward gate bias stress pulses; Dielectrics; Electric potential; Gallium nitride; Kinetic theory; Logic gates; Monitoring; Stress; AlGaN; Coulomb charging; GaN; MIS-HEMT; bilayer gate stack; capture emission time map; charge feedback mechanism; forward gate bias stress; repetitive stress pulses; threshold voltage drift;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861110

Filename

6861110