Title :
Enhancement of Vth drift for repetitive gate stress pulses due to charge feedback effect in GaN MIS-HEMTs
Author :
Lagger, P. ; Ostermaier, C. ; Pogany, Dionyz
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Abstract :
An unexpected enhancement of Vth drift (ΔVth) in GaN MIS-HEMTs induced by repetitive forward gate bias stress pulses in contrast to single pulses is found. Further, it is revealed that the slope of ΔVth recovery curves decreases for increasing intermediate-recovery time ti, i.e. the recovery time in between individual stress pulses. The observed behavior is explained by the interaction of the 2DEG channel with the dielectric/III-N interface via the III-N barrier during (repetitive) stress, for which a charge feedback mechanism plays a crucial role.
Keywords :
III-V semiconductors; MISFET; dielectric materials; gallium compounds; high electron mobility transistors; two-dimensional electron gas; wide band gap semiconductors; 2DEG channel; GaN; III-N barrier; charge feedback effect; dielectric interface; drift enhancement; intermediate-recovery time; recovery curves; repetitive forward gate bias stress pulses; Dielectrics; Electric potential; Gallium nitride; Kinetic theory; Logic gates; Monitoring; Stress; AlGaN; Coulomb charging; GaN; MIS-HEMT; bilayer gate stack; capture emission time map; charge feedback mechanism; forward gate bias stress; repetitive stress pulses; threshold voltage drift;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861110
