Title :
30 Gbps high optical bandwidth silicon modulator
Author :
Hao Xu ; Xianyao Li ; Xi Xiao ; Zhiyong Li ; Tao Chu ; Yude Yu ; Jinzhong Yu
Author_Institution :
State Key Lab. of integrated Optoelectron., Inst. of Semicond., Beijing, China
Abstract :
We report a high speed silicon modulator with a 3 dB optical bandwidth of 39 nm. 30 Gbps electro-optical modulations were experimentally demonstrated with a low driving voltage of 3 V.
Keywords :
electro-optical modulation; elemental semiconductors; silicon; Si; bit rate 30 Gbit/s; driving voltage; electro-optical modulations; high optical bandwidth silicon modulator; high speed silicon modulator; voltage 3 V; High-speed optical techniques; Optical fibers; Optical imaging; Optical modulation; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644431
