DocumentCode :
1875889
Title :
Fabrication and field emission characteristics of high density carbon nanotubes microarrays
Author :
Chuang, C.-C. ; Huang, J.H. ; Lee, C.-C. ; Chang, Y.-Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
220
Lastpage :
221
Abstract :
High density carbon nanotube field emitter arrays (CNT-FEA) in both triode and diode structures on Si were fabricated. The carbon nanotubes were synthesized using a microwave-heated CVD process. The emission image of a diode-type CNT-FEA demonstrated a brightness of ∼1800 cd/m2 and a homogeneous emission quality. The cross-sectional SEM image of a triode-type emitter showed that CNTs in triode structures were shorter and less dense than CNTs in the diode-type emitters, though almost identical growth conditions of CNTs were utilized. The rough surface morphology of the emitter zone indicated the formation of chromium-silicide that could enhance the conductivity of Si substrates. Emission characteristics of the triode CNT-FEA showed that with a 1-μm SiO2 as the spacer, very low operating voltage could be applied to the gate. Therefore, high density CNT field emitter arrays with low turn-on voltage and large emission current were successfully fabricated.
Keywords :
carbon nanotubes; chemical vapour deposition; diodes; electrical conductivity; field emitter arrays; scanning electron microscopy; surface morphology; triodes; C; SEM image; Si substrates; carbon nanotube field emitter arrays; carbon nanotubes microarrays; chromium-silicide; conductivity; diode-type emitter; emission current; emission image; emitter zone; field emission; gate; growth conditions; microwave-heated CVD; operating voltage; spacer; surface morphology; triode-type emitter; turn-on voltage; Brightness; Carbon nanotubes; Conductivity; Diodes; Fabrication; Field emitter arrays; Low voltage; Rough surfaces; Surface morphology; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354982
Filename :
1354982
Link To Document :
بازگشت