DocumentCode
1875896
Title
Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain
Author
Sukhdeo, David S. ; Donguk Nam ; Ju-Hyung Kang ; Petykiewicz, Jan ; Jae Hyung Lee ; Woo Shik Jung ; Vuckovic, Jelena ; Brongersma, Mark L. ; Saraswat, Krishna C.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2013
fDate
28-30 Aug. 2013
Firstpage
73
Lastpage
74
Abstract
We report uniaxial tensile strains up to 5.0% in lithographically patterned germanium nanowires, which is enough strain to make germanium a direct bandgap semiconductor. Theoretically, this strain can reduce a germanium laser´s threshold by >16,000x.
Keywords
elemental semiconductors; germanium; internal stresses; nanolithography; nanopatterning; nanowires; semiconductor epitaxial layers; Ge; direct bandgap germanium nanowires; direct bandgap semiconductor; germanium laser threshold; lithographically patterned germanium nanowires; uniaxial tensile strain; Germanium; Nanowires; Photonic band gap; Silicon; Tensile strain; Uniaxial strain; band engineering; germanium; laser materials; silicon photonics; strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location
Seoul
ISSN
1949-2081
Print_ISBN
978-1-4673-5803-3
Type
conf
DOI
10.1109/Group4.2013.6644432
Filename
6644432
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