Title :
Tunneling currents and reliability of atomic-layer-deposited SiBCN for low-κ spacer dielectrics
Author :
Southwick, Richard G. ; Sathiyanarayanan, R. ; Bajaj, Mohit ; Mehta, Sharad ; Yamashita, Takayoshi ; Gundapaneni, Suresh ; Pandey, Rajan K. ; Wu, E. ; Murali, Kota V. R. M. ; Cohen, Sholom ; Stathis, J.
Author_Institution :
IBM, Albany, NY, USA
Abstract :
Reduced gate-to-contact thickness is prompting a search for compatible spacer dielectrics with reduced dielectric constants (κ). We compare the reliability of the traditional spacer dielectric, Si3N4, with a lower κ material, SiBCN. Weibull slopes and power-law exponent are measured to be close to that of SiO2. Guidance is given on the minimum SiBCN spacer thickness.
Keywords :
Weibull distribution; atomic layer deposition; boron compounds; carbon compounds; leakage currents; low-k dielectric thin films; permittivity; reliability; silicon compounds; tunnelling; Si3N4; SiBCN; SiO2; Weibull slope; atomic-layer-deposited SiBCN reliability; dielectric constant; leakage current; low-κ spacer dielectric; power-law exponent; reduced gate-to-contact thickness; spacer dielectric reliability; tunneling current; Dielectrics; Electric breakdown; Leakage currents; Logic gates; Materials; Reliability; Tunneling; MOS cap; SiBCN; TDDB; reliability; silicon nitride;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861115
