Title :
Low-field TDDB reliability data to enable accurate lifetime predictions
Author :
Liniger, E.G. ; Cohen, S.A. ; Bonilla, G.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
A 30 month module-based low-field TDDB study of 90nm pitch Back End of the Line (BEOL) interconnect structures and a 9 month study of 80nm pitch BEOL structures have shown that the commonly used root-E extrapolation model is overly conservative at predicting TDDB lifetimes at low applied fields. A less conservative acceleration model is required to make accurate lifetime predictions at low fields.
Keywords :
electric breakdown; extrapolation; interconnections; low-k dielectric thin films; reliability; BEOL interconnect structures; accurate lifetime predictions; conservative acceleration model; low applied fields; low-k materials; module based low-field TDDB reliability data; pitch back end of the line; root-E extrapolation model; size 90 nm; time 30 month; time 9 month; time dependent dielectric breakdown; Acceleration; Data models; Mathematical model; Predictive models; Reliability; Testing; Acceleration model; Low-field; TDDB;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861117
