Title :
Germainum photodetectors coupled with silicon waveguides on a flexible substrate using nanomembrane transfer printing method
Author :
Namki Cho ; Munho Kim ; Zhenqiang Ma
Author_Institution :
Dept. of Electron. & Comput. Eng., Univ. of Wisconsin - Madison, Madison, WI, USA
Abstract :
Metal-Semiconductor-Metal structured germanium photodetector is fabricated coupled with silicon waveguide on flexible substrate. Unique nanomembrane transfer printing method for low temperature process and high quality crystalline condition is used for stacking silicon and germanium layers. Optical measurement shows that its dark/photo current characteristics and quantum efficiency of 1.52 um laser source. For device dimensions and materials, FDTD simulation is calculated.
Keywords :
elemental semiconductors; finite difference time-domain analysis; flexible electronics; germanium; integrated optoelectronics; metal-semiconductor-metal structures; optical fabrication; optical waveguides; photoconductivity; photodetectors; silicon; FDTD simulation; Ge-Si; dark current characteristics; flexible substrate; germanium layer stacking; high quality crystalline condition; laser source; low temperature process; metal-semiconductor-metal structured germanium photodetector; nanomembrane transfer printing method; optical measurement; photocurrent characteristics; quantum efficiency; silicon layer stacking; silicon waveguides; wavelength 1.52 mum; Optical variables measurement; Optical waveguides; Photodetectors; Positron emission tomography; Printing; Silicon; Substrates; Ge photodetector; Si waveguide; infrared nano membrane and transfer printing;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644434
