Title :
The impact of high Vth drifts tail and real workloads on SRAM reliability
Author :
Angot, D. ; Huard, Vincent ; Quoirin, M. ; Federspiel, Xavier ; Haendler, S. ; Saliva, M. ; Bravaix, A.
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Based on experimental measurements at bitcell level combined with SPICE and Monte-Carlo simulations, an analytical method is presented to accurately predict fresh/aged Vmin distributions. The impact of BTI variability modeling and real workloads considerations is also deeply analyzed in this paper.
Keywords :
Monte Carlo methods; SPICE; SRAM chips; integrated circuit modelling; integrated circuit reliability; BTI variability modeling; Monte Carlo simulation; SPICE simulation; SRAM reliability; bitcell level; high threshold voltage drift tail; Aging; Degradation; Mathematical model; Random access memory; SPICE; Standards; Stress; Bias Temperature Instability (BTI); Static Random Access Memory (SRAM); reliability; variability; workloads;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861126
