The Patterning of Electric Circuits by Mask-Deposition Technology

We dev eloped the dep osition-mask to apply MEMS techn olog y and the mask-de positio n technology to pattern fine precise electric circuits. As the mask was fabricated to from a dry-et ching proc ess using the De ep-Si-RIE and a wet-etching pro cess, this mask can pattern fine precision electric circuits. We also dev eloped ma sk contact tech nolo gy that maintains go od co ntact betw een the mask and the substrate. The tech nolo gy is such a that magn etic layer is dep osited on the mask surface by using electroless-plating, and achieves go od adh esion for inserting the substrate between this mask an d the rub ber she et magn et. Th ese techn ologies sh ow that the fine precise electric circuits of 28 µ m lines and 18 µ m spaces can be consta ntly achieved. In addition, this electric-pattern is continu al and is not disrupted by the shade of the beam that reinforc es the mask.