DocumentCode :
1876218
Title :
Field emission characteristics of BCN nanofilm
Author :
Kimura, Chiharu ; Shima, Hidekazu ; Okada, Kunitaka ; Funakawa, Shingo ; Sugino, Takashi
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
242
Lastpage :
245
Abstract :
In this paper, addition of carbon (C) atoms into the hexagonal boron nitride (h-BN) film was found to solve cracking or peeling off the substrate. Boron carbon nitride (BCN) nanofilms with a thickness of ∼8-10 nm were grown on n-Si(100) substrates by plasma assisted chemical vapor deposition (PACVD). Field emission characteristics were investigated for (BCN) nanofilms with various C compositions. No degradation of the field emission characteristics occurred for the BCN nanofilms with C compositions lower than 20%. On the other hand, the turn-on electric field increased with carbon composition for the BCN nanofilms with C compositions higher than 20%.
Keywords :
boron compounds; carbon compounds; cracks; electron field emission; fracture; nanostructured materials; plasma CVD; thin films; BCN; BCN nanofilm; cracking; field emission; hexagonal boron nitride film; plasma assisted chemical vapor deposition; substrate peeling; turn-on electric field; Atomic force microscopy; Atomic measurements; Boron; Carbon dioxide; Cathodes; Electron emission; Force measurement; Substrates; Surface morphology; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354995
Filename :
1354995
Link To Document :
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