Title :
Wafer-level fabrication of a triboelectric energy harvester
Author :
Mengdi Han ; Bocheng Yu ; Zongming Su ; Bo Meng ; Xiaoliang Cheng ; Xiao-Sheng Zhang ; Haixia Zhang
Author_Institution :
Sci. & Technol. on Micro/Nano Fabrication Lab., Peking Univ., Beijing, China
Abstract :
We present a wafer-level fabrication method for triboelectric energy harvester (TEH), which fabricates the TEH completely in batch fabrication process, without any manually assembly step. Finite element method (FEM) simulation was conducted to investigate the open-circuit potential distribution and short-circuit charge distribution. Experimental measurements show that this device can produce 235 mV peak voltage at the frequency of 30 Hz, under the 100 MΩ external resistance. Compared with previous TEHs, the proposed device can be batch fabricated in CMOS-compatible process and the reduced size allows it to be easily integrated with other electronic devices (e.g., keyboards).
Keywords :
CMOS integrated circuits; energy harvesting; finite element analysis; semiconductor technology; triboelectricity; CMOS-compatible process; FEM; TEH; batch fabrication process; electronic devices; external resistance; finite element method simulation; frequency 30 Hz; open-circuit potential distribution; peak voltage; resistance 100 Mohm; short-circuit charge distribution; size reduction; triboelectric energy harvester; voltage 235 mV; wafer-level fabrication method; Electric potential; Electrodes; Fabrication; Gold; Resists; Vibrations;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
DOI :
10.1109/MEMSYS.2015.7051150
