Improving ESD robustness of stacked diodes with embedded SCR for RF applications in 65-nm CMOS

Author

Chun-Yu Lin ; Mei-Lian Fan ; Ming-Dou Ker ; Li-Wei Chu ; Jen-Chou Tseng ; Ming-Hsiang Song

Author_Institution

Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan

fYear

2014

fDate

1-5 June 2014

Abstract

To protect the radio-frequency (RF) integrated circuits from the electrostatic discharge (ESD) damage in nanoscale CMOS process, the ESD protection circuit must be carefully designed. In this work, stacked diodes with embedded silicon-controlled rectifier (SCR) to improve ESD robustness was proposed for RF applications. Experimental results in 65-nm CMOS process show that the proposed design can achieve low parasitic capacitance, low turn-on resistance, and high ESD robustness.

Keywords

CMOS integrated circuits; electrostatic discharge; nanoelectronics; radiofrequency integrated circuits; semiconductor diodes; thyristors; ESD protection circuit; RF applications; RF integrated circuits; electrostatic discharge damage; embedded SCR; embedded silicon-controlled rectifier; high ESD robustness; low parasitic capacitance; low turn-on resistance; nanoscale CMOS process; radiofrequency integrated circuits; size 65 nm; stacked diodes; CMOS integrated circuits; Electrostatic discharges; Parasitic capacitance; Radio frequency; Robustness; Semiconductor diodes; Thyristors; Diode; electrostatic discharge (ESD); radio-frequency (RF); silicon-controlled rectifier (SCR);

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861132

Filename

6861132