Title :
Improvement of photoluminescence from ge waveguides fabricated by low temperature selective epitaxial growth and rapid thermal annealing
Author :
Oda, K. ; Okumura, Takashi ; Tani, Kazuya ; Ido, T. ; Kako, Shuta ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
Photonics Electron. Technol. Res. Assoc. (PETRA), Kokubunji, Japan
Abstract :
The photoluminescence from Ge waveguides was improved due to high n-type doping concentration and large tensile strain of Ge layers by combination of low temperature epitaxial growth and RTA process.
Keywords :
doping profiles; elemental semiconductors; epitaxial growth; germanium; optical fabrication; optical waveguides; photoluminescence; rapid thermal annealing; Ge waveguides; RTA process; Si; low temperature selective epitaxial growth; n-type doping concentration; photoluminescence; rapid thermal annealing; tensile strain; Annealing; Doping; Epitaxial growth; Optical waveguides; Photonics; Silicon; Tensile strain;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644444
