DocumentCode :
1876295
Title :
Effect of erbium ion concentration on gain spectral hole burning in silica-based erbium-doped fiber
Author :
Ono, S. ; Tanabe, S. ; Nishihara, M. ; Ishikawa, E.
Author_Institution :
Graduate Sch. of Human & Environ. Studies, Kyoto Univ., Japan
Volume :
4
fYear :
2005
fDate :
6-11 March 2005
Abstract :
The erbium concentration dependence of gain spectral hole burning in EDF was investigated. We propose the energy transfer mechanism between Er ions, which contributes to the suppression of the second-hole at 1530 nm.
Keywords :
doping profiles; erbium; optical fibre amplifiers; optical fibre testing; optical hole burning; 1530 nm; EDF; Er ion energy transfer mechanism; erbium ion concentration; gain spectral hole burning; second-hole suppression; silica-based erbium-doped fiber; Doped fiber amplifiers; Erbium; Erbium-doped fiber amplifier; Optical attenuators; Optical fiber polarization; Optical saturation; Particle beam optics; Probes; Stimulated emission; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
Type :
conf
DOI :
10.1109/OFC.2005.192962
Filename :
1501500
Link To Document :
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