• DocumentCode
    1876303
  • Title

    Low temperature surface passivation for carrier injection type SiGe optical modulator

  • Author

    Younghyun Kim ; Jaehoon Han ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    Surface passivation using Al2O3 deposited at 200 °C is examined to suppress surface recombination for carrier injection SiGe optical modulators. The modulation efficiency is improved by 1.3 by inserting Al2O3 layer prior to SiO2 deposition.
  • Keywords
    Ge-Si alloys; aluminium compounds; integrated optics; optical modulation; passivation; semiconductor materials; silicon compounds; surface recombination; SiGe-Al2O3-SiO2-Si; carrier injection type SiGe optical modulator; low temperature surface passivation; modulation efficiency; surface recombination suppression; temperature 200 degC; Aluminum oxide; MOS capacitors; Optical modulation; Passivation; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644445
  • Filename
    6644445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1876303