Title :
Piezoelectric micro energy harvesters employing advanced (Mg,Zr)-codoped AlN thin film
Author :
Minh, L.V. ; Hara, M. ; Kuwano, H. ; Yokoyama, T. ; Nishihara, T. ; Ueda, M.
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
We report the new doped-AlN thin film, (Mg,Zr)AlN, based micro energy harvester. By co-doping Mg and Zr into AlN crystal, (Mg,Zr)AlN shows giant piezoelectricity and preserves low permittivity. (Mg,Zr)AlN has higher figure of merit (FOM = e312/(ε0ε)) than conventional PZT. The 13 at.%-(Mg,Zr)AlN had the experimental FOM of up to 16.7 GPa. The micromachining harvester provided the high normalized power density of 3.72 mW.g-2.cm-3. This achievement was 1.5-fold increase compared to state of the art.
Keywords :
aluminium compounds; doping; energy harvesting; magnesium compounds; micromachining; permittivity; piezoelectric transducers; piezoelectricity; thin films; zirconium compounds; (MgZr)AlN; AlN crystal; co-doping; doped-AlN thin film; figure of merit; giant piezoelectricity; low permittivity; micromachining harvester; piezoelectric micro energy harvester; Abstracts; Art; Gold; III-V semiconductor materials; Lead; Open systems; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
DOI :
10.1109/MEMSYS.2015.7051154
