Title :
Evaluation of chemical potential for graphene optical modulators based on the semiconductor-metal transition
Author :
Kayoda, T. ; Han, J.H. ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
TD-BPM simulation exhibits high modulation efficiency of 0.61 dB/μm in graphene optical modulators based on the semiconductor-metal transition. Evaluation of graphene chemical potential in graphene-gate-metal MOS capacitors demonstrates feasibility of device principle for 1.55-μm wavelength.
Keywords :
MOS capacitors; chemical potential; graphene; integrated optics; integrated optoelectronics; optical modulation; time-domain analysis; C; TD-BPM simulation; chemical potential; graphene optical modulators; graphene-gate-metal MOS capacitors; modulation efficiency; semiconductor-metal transition; time-domain beam propagation method; Charge carrier density; Chemicals; Graphene; Logic gates; Optical modulation; Optical polarization;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644446
