DocumentCode
1876417
Title
Integral micro-channel liquid cooling for power electronics
Author
Stevanovic, Ljubisa D. ; Beaupre, Richard A. ; Gowda, Arun V. ; Pautsch, Adam G. ; Solovitz, Stephen A.
Author_Institution
Gen. Electr. Global Res. Center, Niskayuna, NY, USA
fYear
2010
fDate
21-25 Feb. 2010
Firstpage
1591
Lastpage
1597
Abstract
A novel integral micro-channel heat sink was developed, featuring an array of sub-millimeter channels fabricated directly in the back-metallization layer of the direct bond copper or active metal braze ceramic substrate, thus minimizing the material between the semiconductor junction and fluid and the overall junction-to-fluid thermal resistance. The ceramic substrate is bonded to a baseplate that includes a set of interleaved inlet and outlet manifolds for uniform fluid distribution across the actively cooled area of the heat sink. The interleaved manifolds greatly reduce the pressure drop and minimize temperature gradient across the heat sink surface. After performing detailed simulations and design optimization, a 200 A, 1200 V IGBT power module with the integral heat sink was fabricated and tested. The junction-to-fluid thermal resistivities for the IGBTs and diodes were 0.17°C*cm2/W and 0.14°C*cm2/W, respectively. The design is superior to all reported liquid cooled heat sinks with a comparable material system, including the micro-channel designs. It is also easily scaleable to larger heat sink surfaces without compromising the performance.
Keywords
cooling; heat sinks; insulated gate bipolar transistors; microchannel flow; power bipolar transistors; semiconductor junctions; thermal conductivity; thermal management (packaging); IGBT power module; back-metallization layer; ceramic substrate; current 200 A; design optimization; integral microchannel heat sink; integral microchannel liquid cooling; interleaved inlet manifolds; interleaved outlet manifolds; junction-to-fluid thermal resistance; junction-to-fluid thermal resistivities; power electronics; submillimeter channel array; uniform fluid distribution; voltage 1200 V; Bonding; Ceramics; Copper; Heat sinks; Insulated gate bipolar transistors; Liquid cooling; Power electronics; Resistance heating; Substrates; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location
Palm Springs, CA
ISSN
1048-2334
Print_ISBN
978-1-4244-4782-4
Electronic_ISBN
1048-2334
Type
conf
DOI
10.1109/APEC.2010.5433444
Filename
5433444
Link To Document