Demonstrating individual leakage path from random telegraph signal of stress induced leakage current

Time-dependent characteristics of stress induced leakage current (SILC) for the 5.7 and 7.7 nm oxides were evaluated to detect the random telegraph signal (RTS) of gate leakage current. The leakage current from the RTS of IG was extracted. Each current value extracted from RTS of SILC indicates the absolute current of individual localized leakage spot. The results indicate that the absolute value at individual leakage spot can be analyzed by this method, and this evaluation method is useful for the development of process and design technologies for highly reliable MOS devices.