Mechanism exploration on Cu interconnect negative resistance shift during stress migration

Author

Xiangfu Zhao ; Dulin Wang ; Gan, Howard ; Zheng, Kai ; Wu, Junyong ; Chang, V. ; Chien, Wei-ting Kary

Author_Institution

Semicond. Manuf. Int. Corp., Shanghai, China

fYear

2014

fDate

1-5 June 2014

Abstract

Negative shift of resistance during stress migration was observed in Cu-based, dual-damascene technologies. One significant reason is caused by via copper crushing through the barrier layer into copper trench underneath, which means that via location acts main role in large shrinking of via resistance. Besides, negative shift of via resistance is found to be increasing with baking time, which indicates that anneal effect can also play an important role in decreasing via resistance.

Keywords

annealing; copper; finite element analysis; interconnections; Cu; anneal effect; baking time; barrier layer; copper interconnect negative resistance shift; copper trench; copper-based technology; dual-damascene technology; mechanism exploration; stress migration; via copper; via location; via resistance negative shift; via resistance shrinking; Annealing; Copper; Grain boundaries; Integrated circuit interconnections; Nitrogen; Resistance; Stress; Anneal; Cu-based Interconnect; Negative Resistance Shift; Stress Migration;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861150

Filename

6861150