DocumentCode
1876603
Title
Electron emission from boron nitride films deposited on patterned substrates
Author
Shima, Hidekazu ; Funakawa, Shingo ; Kimura, Chiharu ; Sugino, Takashi
Author_Institution
Dept. of Electr. Eng., Osaka Univ., Japan
fYear
2004
fDate
11-16 July 2004
Firstpage
268
Lastpage
269
Abstract
In this paper field emission characteristics are investigated for the BN nanofilm deposited on the patterned substrate which leads to an increase of the field enhancement factor. A reduction in the threshold electric field and an increase of the emission site are demonstrated. Uniformity of the electron emission is significantly improved.
Keywords
III-V semiconductors; boron compounds; electron field emission; nanostructured materials; semiconductor thin films; BN; electron emission; emission site; field enhancement factor; nanofilm; patterned substrates; threshold electric field; Anodes; Boron; Cathodes; Electrodes; Electron emission; Etching; Gallium arsenide; Lithography; Plasma temperature; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1355009
Filename
1355009
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