Title :
1325 nm VCSELs emitting 1.2 mW single mode output in the 20-80°C temperature range
Author :
Syrbu, A. ; Mereuta, A. ; Caliman, A. ; Iakovlev, V. ; Berseth, C.A. ; Suruceanu, G. ; Kapon, Eli ; Rudra, Atri ; Kapon, Eli
Author_Institution :
BeamExpress S.A, Lausanne, Switzerland
Abstract :
Wafer fused InGaAlAs/AlGaAs VCSEL emitting in the vicinity of 1325 nm with InAlGaAs-based tunnel junction injection show record high 1.2 mW single mode output and 40 dB side-mode suppression ratio in the 20-80°C temperature range and. good on-wafer device parameter uniformity.
Keywords :
indium compounds; surface emitting lasers; 1.2 mW; 1325 nm; 20 to 80 degC; InAlGaAs-based tunnel junction injection; InGaAlAs/AlGaAs; on-wafer device parameter uniformity; side-mode suppression ratio; single mode output; wafer fused VCSEL; Distributed Bragg reflectors; Etching; Laser modes; Optical devices; Optical surface waves; Surface emitting lasers; Surface waves; Temperature distribution; Vertical cavity surface emitting lasers; Voltage;
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
DOI :
10.1109/OFC.2005.192973
