DocumentCode :
1876634
Title :
Impedance-detuned high-contrast vertical cavity semiconductor switch
Author :
Porzi, C. ; Isomaki, Antri ; Guina, M. ; Okhotnikov, O.G.
Author_Institution :
Optoelectronics Res. Centre, Tampere Univ. of Technol., Finland
Volume :
4
fYear :
2005
fDate :
6-11 March 2005
Abstract :
We report an all-optical semiconductor gate optimized for high-contrast switching. Using a pump signal with an intensity of less than ∼25 KW/cm2, we demonstrate a 30-dB contrast ratio for 10-GHz pulses with energy of 0.05 pJ.
Keywords :
optical pumping; optical switches; semiconductor switches; 0.05 pJ; 10 GHz; all-optical semiconductor gate; high-contrast semiconductor switch; impedance-detuned semiconductor switch; pump signal; vertical cavity semiconductor switch; Absorption; Impedance; Indium phosphide; Nonlinear optics; Optical pumping; Optical saturation; Optical signal processing; Quantum well devices; Reflectivity; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
Type :
conf
DOI :
10.1109/OFC.2005.192974
Filename :
1501512
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1876634
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