DocumentCode
187667
Title
Reliability performance of different layouts of wide metal tracks
Author
Kludt, J. ; Weide-Zaage, K. ; Ackermann, Mathieu ; Kovacs, Christian ; Hein, V.
Author_Institution
Inf. Technol. Lab., Gottfried Wilhelm Leibniz Univ., Hannover, Germany
fYear
2014
fDate
1-5 June 2014
Abstract
For industrial and automotive applications a 0.35μm aluminium CMOS process is one of the common used technologies. An increasing demand on extended operating conditions must be fulfilled especially for high current carrying metal lines. A new design concept is to modify the shape of these lines. The use of slots especially of octahedron slots demonstrates a better robustness towards electromigration in upper metallization layers. Another benefit is the good reliability under pulsed DC conditions primarily in comparison to wide homogeneous filled metal lines. In addition with slotted metal in all metallization layers stress due to thermal expansion can be reduced by keeping the lifetime at an adequate level. The performance of different layouts were investigated by electromigration tests and simulation to prepare basis knowledge for decision making process for design for higher robustness.
Keywords
decision making; electromigration; integrated circuit layout; integrated circuit reliability; aluminium CMOS process; automotive applications; decision making process; design concept; electromigration; high current carrying metal lines; industrial applications; metallization layers stress; octahedron slots; pulsed DC conditions; reliability performance; thermal expansion; upper metallization layers; wide homogeneous filled metal lines; wide metal tracks; Aluminum; Electromigration; Finite element analysis; Layout; Reliability; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2014 IEEE International
Conference_Location
Waikoloa, HI
Type
conf
DOI
10.1109/IRPS.2014.6861153
Filename
6861153
Link To Document