DocumentCode
1876747
Title
High current density nanofilament cathodes for microwave amplifiers
Author
Schnell, J.-P. ; Minoux, E. ; Gangloff, L. ; Vincent, P. ; Legagneux, P. ; Dieurnegard, D. ; David, J.-F. ; Peauger, F. ; Hudanski, L. ; Teo, K.B.K. ; Lacerda, R. ; Chhowalla, M. ; Hasko, D.G. ; Ahmed, H. ; Amaratunga, G.A.J. ; Milne, W.I. ; Vila, L. ; Pr
Author_Institution
Thales TRT & TED, France
fYear
2004
fDate
11-16 July 2004
Firstpage
278
Lastpage
279
Abstract
We study high current density nanofilament cathodes for microwave amplifiers. Two different types of aligned nanofilament array have been studied: first, metallic nanowires grown by electrodeposition into nanoporous templates at very low temperature (T<100°C) on a silicon wafer; second, carbon nanotubes/nanofibers (CNs) grown by catalytic plasma enhanced chemical vapour deposition. The fabrication process and the field emission properties of these two types of cathodes will be presented. Presently, the best results are obtained with CN cathodes. Arrays of 5.8 μm height and 50 nm diameter CNs exhibit geometrical enhancement factor (h/r) of 240±7.5%. Moreover, currents close to 100 μA per emitter have been measured using a scanning anode field emission microscope. Due to these properties, 0.5 × 0.5 mm2 arrays emit a 2 mA current corresponding to 0.8 A/cm2, in DC mode. The use of these cold cathodes in microwave triodes delivering 10 to 50 W at 30 GHz will be discussed for future telecommunication applications.
Keywords
carbon nanotubes; cathodes; electrodeposition; field emission; microwave amplifiers; nanowires; plasma CVD; scanning electron microscopy; 10 to 50 W; 100 muA; 2 mA; 30 GHz; 5.8 mum; 50 nm; C; DC mode; carbon nanotubes; catalytic plasma enhanced chemical vapour deposition; cold cathodes; electrodeposition; fabrication process; field emission properties; geometrical enhancement factor; high current density nanofilament cathodes; metallic nanowires; microwave amplifiers; microwave triodes; nanofilament array; nanoporous templates; scanning anode field emission microscope; silicon wafer; telecommunication applications; Carbon nanotubes; Cathodes; Current density; Microwave amplifiers; Nanoporous materials; Nanowires; Plasma chemistry; Plasma properties; Plasma temperature; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1355014
Filename
1355014
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